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TRANSISTOR COLLECTOR BREAKDOWN IN THE PRESENCE OF CONDUCTED EMP AND GAMMA RADIATION

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D. H. Rice · 1975

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Electromagnetic pulse exposure predictably disrupts transistor electrical behavior, demonstrating how EMF can interfere with electrical systems.

Plain English Summary

Summary written for general audiences

This 1975 study examined how transistor circuits respond when exposed to both electromagnetic pulse (EMP) and gamma radiation simultaneously. Researchers found that EMP exposure reduced the breakdown voltage of transistors while gamma radiation altered their electrical characteristics, creating predictable changes in circuit behavior.

Why This Matters

While this study focuses on electronic components rather than biological effects, it demonstrates a critical principle: electromagnetic fields can fundamentally alter electrical systems through multiple mechanisms simultaneously. The research shows that EMP exposure reduces the voltage threshold at which transistors fail, while ionizing radiation changes their resistance properties. This matters because our bodies are essentially bioelectrical systems, with neurons, heart rhythms, and cellular processes all dependent on precise electrical signaling. If electromagnetic fields can predictably disrupt the electrical behavior of transistors, we should take seriously the possibility that they could interfere with our body's own electrical systems. The study's mathematical modeling approach also highlights how EMF effects can be quantified and predicted, countering industry claims that such effects are too variable or weak to matter.

Exposure Information

Specific exposure levels were not quantified in this study.

Cite This Study
D. H. Rice (1975). TRANSISTOR COLLECTOR BREAKDOWN IN THE PRESENCE OF CONDUCTED EMP AND GAMMA RADIATION.
Show BibTeX
@article{transistor_collector_breakdown_in_the_presence_of_conducted_emp_and_gamma_radiat_g6199,
  author = {D. H. Rice},
  title = {TRANSISTOR COLLECTOR BREAKDOWN IN THE PRESENCE OF CONDUCTED EMP AND GAMMA RADIATION},
  year = {1975},
  
  
}

Quick Questions About This Study

The study found that EMP exposure reduces the common emitter breakdown voltage of transistors, making them more susceptible to electrical failure at lower voltage thresholds than normal operating conditions.
No, the research showed that while gamma radiation changes transistor resistance properties, it does not alter the latch or sustaining voltage levels of the transistors under test conditions.
Yes, researchers developed mathematical expressions using a modified Ebers-Moll model that accurately predicted transistor behavior when exposed to both EMP and ionizing radiation simultaneously, showing good agreement with observed results.
The study demonstrated that simultaneous EMP and gamma radiation exposure alters the negative resistance characteristics of transistors, though the specific changes depend on the interaction between electromagnetic and ionizing radiation effects.
Understanding how electronic components respond to multiple electromagnetic stressors simultaneously helps predict circuit behavior in real-world scenarios where devices may face both electromagnetic pulse and ionizing radiation exposure concurrently.